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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D070
BAS56 High-speed double diode
Product data sheet Supersedes data of April 1996 1996 Sep 10
NXP Semiconductors
Product data sheet
High-speed double diode
FEATURES * Small plastic SMD package * High switching speed: max. 6 ns * Continuous reverse voltage: max. 60 V * Repetitive peak reverse voltage: max. 60 V * Repetitive peak forward current: max. 600 mA.
handbook, halfpage
BAS56
PINNING PIN 1 2 3 4 DESCRIPTION cathode (k1) cathode (k2) anode (a2) anode (a1)
DESCRIPTION The BAS56 consists of two highspeed switching diodes fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT143 package. The diodes are not connected.
4
3 4 3
APPLICATIONS * High speed switching in e.g. surface mounted circuits.
1 1
Top view
Marking code: L51.
2
2
MAM059
Fig.1 Simplified outline (SOT143) and symbol.
1996 Sep 10
2
NXP Semiconductors
Product data sheet
High-speed double diode
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VRRM VR VR IF PARAMETER repetitive peak reverse voltage repetitive peak reverse voltage continuous reverse voltage continuous reverse voltage continuous forward current series connection single diode loaded; see Fig.2; note 1 double diode loaded; see Fig.2; note 1 IFRM IFSM repetitive peak forward current non-repetitive peak forward current single diode loaded double diode loaded square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 100 s t = 10 ms Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 - - - - -65 - 9 3 series connection - - - - - - CONDITIONS MIN. - MAX. 60 120 60 120 200 150 600 430
BAS56
UNIT V V V V mA mA mA mA
A A A mW C C
1.7 250 +150 150
1996 Sep 10
3
NXP Semiconductors
Product data sheet
High-speed double diode
ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS see Fig.3; IF = 200 mA; DC value; note 1 see Fig.5 VR = 60 V VR = 60 V; Tj = 150 C IR reverse current series connection VR = 120 V VR = 120 V; Tj = 150 C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 400 mA to IR = 400 mA; RL = 100 ; measured at IR = 40 mA; see Fig.7 when switched from IF = 400 mA; tr = 30 ns; see Fig.8 when switched from IF = 400 mA; tr = 100 ns; see Fig.8 Note - - - - - - - 100 100 2.5 6 100 100 MIN. - MAX. 1.0
BAS56
UNIT V
nA A nA A pF ns
Vfr
forward recovery voltage
- -
2.0 1.5
V V
1. Tamb = 25 C; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 360 500 UNIT K/W K/W
1996 Sep 10
4
NXP Semiconductors
Product data sheet
High-speed double diode
GRAPHICAL DATA
BAS56
handbook, halfpage
300
MBG439
handbook, halfpage
300
MBH279
IF (mA) 200
(1)
IF (mA) 200
100
(2)
100
0 0 100 Tamb (oC) 200
0 0 1 VF (V) 2
Device mounted on a FR4 printed-circuit board. (1) Single diode loaded. (2) Double diode loaded.
Tj = 25 C.
Fig.2
Maximum permissible continuous forward current as a function of ambient temperature.
Fig.3
Forward current as a function of forward voltage; typical values.
102 handbook, full pagewidth IFSM (A)
MBG703
10
1
10-1 1 10
102
103
tp (s)
104
Based on square wave currents. Tj = 25 C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 10
5
NXP Semiconductors
Product data sheet
High-speed double diode
BAS56
102 handbook, halfpage IR (A) 10
MBH282
MBH283
handbook, halfpage
2.0
Cd (pF) 1.5
1
(1)
(2)
1.0
10-1
0.5
10-2 0 100 Tj (oC) 200
0 0 10 20 VR (V) 30
(1) VR = 60 V; maximum values. (2) VR = 60 V; typical values.
f = 1 MHz; Tj = 25 C.
Fig.5
Reverse current as a function of junction temperature.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
1996 Sep 10
6
NXP Semiconductors
Product data sheet
High-speed double diode
BAS56
handbook, full pagewidth
tr
tp t
D.U.T.
R = 50 S V = VR IF x R S
10% SAMPLING OSCILLOSCOPE IF t rr t
IF
R i = 50
VR 90% (1)
MGA881
input signal
output signal
(1) IR = 40 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 k
450
I 90%
V
R = 50 S
D.U.T.
OSCILLOSCOPE R i = 50 10%
MGA882
V fr
t tr tp
t
input signal
output signal
Input signal: forward pulse duration tp = 300 ns; duty factor = 0.01.
Fig.8 Forward recovery voltage test circuit and waveforms.
1996 Sep 10
7
NXP Semiconductors
Product data sheet
High-speed double diode
PACKAGE OUTLINE
BAS56
handbook, full pagewidth
0.75 0.60
0.150 0.090 4 0.1 max 10 max
o
3.0 2.8 1.9 3
B A 0.2 M A B
10 max
o
1.4 1.2
2.5 max
1 1.1 max
o
2 0.1 M A B
30 max
0.88
0 0.1 1.7
0.48
0 0.1
MBC845
TOP VIEW
Dimensions in mm.
Fig.9 SOT143.
1996 Sep 10
8
NXP Semiconductors
Product data sheet
High-speed double diode
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION
BAS56
This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
1996 Sep 10
9
NXP Semiconductors
Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.
Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
(c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 1996 Sep 10

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